Scalvy says its modular EV battery architecture hits 98.3% inverter efficiency, targets 15% longer pack life

Scalvy says a joint concept evaluation with Valeo has validated its modular battery-integrated power architecture for EVs under WLTC operating conditions, marking a step toward automotive deployment of the company’s distributed “Power Neuron” platform.

Instead of using separate centralized inverters, DC-DC converters and onboard chargers, Scalvy’s architecture distributes those functions into compact modules at the edge of each battery pack. The company says that reduces switching and conduction losses while making the system scalable across vehicle classes and battery chemistries.

In the lab-based WLTC evaluation, Scalvy says the system achieved a peak inverter efficiency of 98.3% at 10,000 rpm and 65 Nm. The company also says module-level state-of-charge balancing kept SOC deviation between battery modules negligible during testing, and that the system maintained motor temperatures below 62 °C and power-device temperatures below 65 °C without hotspot formation.

That combination of tight SOC balancing and pulse-like distributed switching reduces localized electrical and thermal stress, enabling faster charging and extending battery life by up to 15%, according to Scalvy. Valeo’s Farouk Boudjemai said the results were “highly encouraging” and would help advance the concept’s readiness level. Scalvy says it is field-testing the technology with select customers and is targeting commercial production in 2027.

Source: Scalvy

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hofer and Pankl develop integrated e-turbo system with high-speed motor, power electronics and controls

hofer Vienna and Pankl Turbosystems are jointly developing fully integrated electrified turbo systems for hybrid and high-performance powertrains, combining the turbomachine, electric machine, power electronics and control strategy into a single engineered system.

The companies say the idea is to avoid treating the e-turbo or e-compressor as an add-on subsystem. Instead, the high-speed electric machine—built with Form Litz winding technology—the power electronics, software controls and turbo machinery are being developed together from the start, with hofer handling the electric machine, electronics and software integration, and Pankl leading turbomachinery design, aerodynamics, materials, and high-speed mechanical integration.

According to the announcement, the integrated approach is intended to improve boost response, raise overall system efficiency and fit more cleanly into hybrid and high-performance architectures. The companies also say it can reduce cooling and packaging demands while improving volumetric and gravimetric power density, EMC and NVH performance, and long-term reliability.

Both companies stress that the development is being carried out to established industrial validation and quality standards, with an eye toward regulated and safety-critical markets. That makes sense: once you’re spinning an electric machine and turbo hardware at very high speed in a tightly packaged system, “integration” stops being a marketing word and starts becoming the whole engineering problem.

Source: hofer

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HeyCharge’s MagicBox retrofit adds solar optimization and load management to existing home EV chargers

HeyCharge has launched HeyCharge Connect, a new product line of retrofit adapters for existing EV chargers, and the first product—the MagicBox—is aimed at turning ordinary OCPP-compatible home wallboxes into smarter, offline-capable charging systems.

The Munich company says the MagicBox plugs into any OCPP-compatible charger and connects it to HeyCharge’s SecureCharge platform without an electrician visit, firmware changes, or downtime. Unlike cloud-dependent chargers that can struggle in garages with poor connectivity, the MagicBox can manage charging sessions, enforce energy limits and communicate with other devices over a local mesh network even when internet access is unavailable.

Once installed, HeyCharge says the adapter enables solar and dynamic-tariff optimization, dynamic load management, smart-home integration and company-car reimbursement features. The company says it already supports Home Assistant, with Matter support planned for the second half of 2026, and can connect with rooftop PV systems and time-varying electricity tariffs to schedule charging around self-consumption and power cost. It also supports Germany’s §14a EnWG requirements for grid operator control of large electrical loads.

HeyCharge is also adding in-vehicle access through Android Automotive OS, which it says will let drivers start and manage charging sessions from the vehicle infotainment system—useful in fleet and pool-car settings where RFID cards and phone apps become operational clutter. The MagicBox will launch first with Easee across Germany, Austria and Switzerland, with availability expected in Q2-Q3 2026.

Source: HeyCharge

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Diodes adds 100 V, 1.5 mΩ MOSFET for 48 V automotive motor drives and OBCs

Diodes Incorporated has expanded its automotive-compliant PowerDI8080-5 MOSFET lineup with a new 100 V N-channel device that the company says offers industry-leading on-resistance for 48 V automotive designs.

The new DMTH10H1M7SPGWQ features a maximum RDS(on) of 1.5 mΩ and is aimed at 48 V BLDC motor drives in applications such as electric power steering and braking systems, along with battery disconnect switches and onboard chargers. Diodes also introduced additional 40 V, 60 V, and 80 V devices in the same 8 mm x 8 mm gullwing-leaded package, including a 40 V part with 0.4 mΩ maximum RDS(on), which the company says is among the lowest in the industry.

The package itself is a big part of the pitch. Diodes says the PowerDI8080-5 footprint is 64 mm²—about 40% of the board area of a TO-263 (D2PAK)—with a low 1.7 mm profile for space-constrained applications. The company also says copper-clip die bonding cuts junction-to-case thermal resistance to as low as 0.3 °C/W, allowing drain currents up to 847 A, while the gullwing leads support automated optical inspection and improved temperature-cycling reliability.

The broader lineup includes the 80 V DMTH81M2SPGWQ, the 60 V DMTH6M70SPGWQ for 24 V applications, and 40 V parts for 12 V motor drives, DC-DC conversion, and microcontroller-driven automotive loads. Diodes says the devices are AEC-qualified and built in IATF 16949-certified facilities.

Source: Diodes Incorporated

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SemiQ’s 1200 V QSiC Dual3 half-bridge modules reach 240 W/in³ for ESS converters, AI cooling

SemiQ has introduced its QSiC Dual3 family of 1200 V half-bridge SiC MOSFET modules for applications including motor drives in data center cooling systems, grid converters in energy storage systems and industrial drives.

The new lineup includes six modules in a 62 mm x 152 mm S4B1 half-bridge package, with on-resistance options of 1 mΩ, 1.4 mΩ, and 2 mΩ. Three versions also add a parallel Schottky barrier diode, which SemiQ says can further reduce switching losses in high-temperature operation. The company says two of the new devices achieve a power density of 240 W/in³.

SemiQ is positioning the Dual3 family as a relatively easy SiC upgrade path for systems built around IGBT modules. The company says the parts were developed to enable IGBT replacement with minimal redesign, and that all MOSFET die undergo wafer-level gate-oxide burn-in screening above 1,450 V. SemiQ also says the modules have low junction-to-case thermal resistance, enabling smaller and lighter heatsinks and simpler overall system design.

“Rising AI-driven power and thermal demands in data centers are pushing the limits of traditional cooling and power systems,” said SemiQ President Timothy Han. He said the Dual3 series is aimed at 250 kW liquid chiller applications on both active front ends and compressor drives, with lower size and weight than comparable silicon IGBT solutions.

Source: SemiQ

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Geely becomes second Chinese automaker to unveil 1,500 kW EV chargers

Chinese EV maker BYD made big headlines a few days ago when it unveiled a new version of its Blade Battery and a Flash Charger to go with it. Using these technologies, which are slated to appear in production vehicles this year, an EV driver can charge up just as quickly as a legacy gas driver can fill up with dino juice. (By the way, the new battery is cheaper than the previous version, and boasts excellent cold-weather performance.)

But BYD isn’t the only game in China—in fact the company has been in a sales slump for the last couple of months, allowing rival (and Volvo owner) Geely to edge it out of the top spot for vehicle deliveries. And now Geely has unveiled its own 1,500 kW EV charger.

Geely says its super-duper charger, which it calls the Extreme Charge Megawatt Pile, has demonstrated peak power of over 1,500 kW, charging the updated Zeekr 001 luxury EV, which boasts a 12C charging rate.

The new 2026 Zeekr 001, launched in October, is based on a 900 V electric architecture, up from 800 V for the previous model. It sports a 95 kWh Golden Battery, and Geely says it can recharge from 10% to 80% in around 7 minutes—more or less matching the performance of BYD’s top vehicles.

Also like BYD, Geely has its own EV charging network. According to China’s Autohome (in Chinese), Geely operates over 2,103 stations in 215 cities.

Source: Electrek

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Renesas’ bidirectional 650 V GaN switch replaces back-to-back FETs with one 110 mΩ device

Renesas has introduced what it calls the industry’s first bidirectional 650 V-class GaN switch with integrated DC blocking, aimed at simplifying power-conversion topologies in applications such as solar microinverters, AI data centers and onboard EV chargers.

The new TP65B110HRU is designed to block both positive and negative current in a single device, eliminating the need for conventional back-to-back FET arrangements. Renesas says that in a single-stage solar microinverter, two of the new bidirectional SuperGaN devices can replace more complex multi-stage arrangements, cutting switch count in half and eliminating intermediate DC-link capacitors. The company says a real-world single-stage solar microinverter implementation achieved more than 97.5% efficiency.

Technically, the device combines a high-voltage bidirectional depletion-mode GaN die with two low-voltage silicon MOSFETs in a co-packaged structure. Renesas says the part supports ±650 V continuous AC/DC operation, ±800 V transient rating, 110 mΩ typical RSS,ON at 25 °C, 3 V typical threshold voltage, ±20 V maximum Vgs, and dv/dt immunity above 100 V/ns. It comes in a top-side-cooled TOLT package with an industry-standard pinout, and the company says it requires no negative gate drive, making it compatible with standard gate drivers.

Renesas says the device has a major practical advantage over enhancement-mode bidirectional GaN devices, which can require more complicated gate-drive schemes. “Customers can now achieve higher efficiency with fewer switching components, smaller PCB area and lower system cost,” said Rohan Samsi, Vice President of Renesas’s GaN Business Division.

Source: Renesas

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