Switzerland-based semiconductor technology firm STMicroelectronics is introducing its fourth-generation STPOWER silicon carbide (SiC) MOSFET product range.
The company’s Generation 4 technology is designed to provide more power efficiency, power density and robustness than previous generations and is optimized for traction inverters in EV powertrains.
ST has completed qualification of the platform’s 750 V class and expects to qualify the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow as the company ramps up volumes through 2025, for applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.
The Generation 4 SiC MOSFETs feature a lower on-resistance (RDS(on)) than prior generations, minimizing conduction losses, and enhancing overall system efficiency. They offer faster switching speeds, which translate to lower switching losses—key for high-frequency applications and enabling more compact and efficient power converters.
The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an RDS(on) at 25 °C, allowing for more compact power converter designs to save space and reduce system costs. The devices are designed to help bring SiC beyond premium EVs to mid-size and compact models.
The Generation 4 technology is robust in Dynamic Reverse Bias (DRB) conditions, exceeding the AQG324 automotive standard to ensure reliable operation in harsh conditions.
ST plans to introduce additional SiC products through 2027. The fifth generation of ST SiC power devices will feature high-power density technology based on planar structure. The company is also developing devices with improved on-resistance RDS(on) values at high temperatures and further RDS(on) reduction compared to existing SiC technologies.
“We continue to advance SiC MOSFET technology with innovations in the device, advanced packages, and power modules,” said Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group.
Source: STMicroelectronics
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