Toshiba launches 650 V SiC MOSFETs in TOLL packages for EV charging and power electronics

Toshiba Electronic Devices & Storage Corporation has introduced three 650 V silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) that use its third-generation SiC technology in surface-mount TOLL packages. These new devices, part numbers TW027U65C, TW048U65C, and TW083U65C, are designed for industrial power electronics with initial volume shipments beginning August 2025.

The company reports that these third-generation SiC MOSFETs are housed in general-purpose TOLL surface-mount packages, which reduce device volume by more than 80 percent compared to through-hole packages such as TO-247 and TO-247-4L(X). This enables increased equipment power density and supports automated manufacturing.

Toshiba says the TOLL package offers lower parasitic impedance—resistance and inductance—than through-hole packages, resulting in decreased switching losses. As a four-terminal package, TOLL allows for a Kelvin connection signal source, which minimizes the impact of source wire inductance on gate driving performance. This design leads to higher switching speeds; for example, the TW048U65C reportedly achieves approximately 55 percent lower turn-on loss and 25 percent lower turn-off loss compared to previous Toshiba 650 V SiC MOSFETs in a TO-247 package without Kelvin connection.

The new MOSFET lineup features optimized drift and channel resistance ratios for improved temperature dependence of drain-source on-resistance. Additional technical specifications include low drain-source on-resistance times gate-drain charge and a typical diode forward voltage (V_DSF) of -1.35 V at V_GS = -5 V.

While suitable for various industrial power electronics, Toshiba identifies EV charging stations and photovoltaic inverters as specific target applications. The devices are also intended for switched-mode power supplies in data centers, servers, communications equipment, and uninterruptible power supplies.

Source: Toshiba Electronic Devices & Storage Corporation

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