Diodes Incorporated has expanded its automotive-compliant PowerDI8080-5 MOSFET lineup with a new 100 V N-channel device that the company says offers industry-leading on-resistance for 48 V automotive designs.
The new DMTH10H1M7SPGWQ features a maximum RDS(on) of 1.5 mΩ and is aimed at 48 V BLDC motor drives in applications such as electric power steering and braking systems, along with battery disconnect switches and onboard chargers. Diodes also introduced additional 40 V, 60 V, and 80 V devices in the same 8 mm x 8 mm gullwing-leaded package, including a 40 V part with 0.4 mΩ maximum RDS(on), which the company says is among the lowest in the industry.
The package itself is a big part of the pitch. Diodes says the PowerDI8080-5 footprint is 64 mm²—about 40% of the board area of a TO-263 (D2PAK)—with a low 1.7 mm profile for space-constrained applications. The company also says copper-clip die bonding cuts junction-to-case thermal resistance to as low as 0.3 °C/W, allowing drain currents up to 847 A, while the gullwing leads support automated optical inspection and improved temperature-cycling reliability.
The broader lineup includes the 80 V DMTH81M2SPGWQ, the 60 V DMTH6M70SPGWQ for 24 V applications, and 40 V parts for 12 V motor drives, DC-DC conversion, and microcontroller-driven automotive loads. Diodes says the devices are AEC-qualified and built in IATF 16949-certified facilities.
Source: Diodes Incorporated
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