NoMIS Power has demonstrated its first 6.5 kV large-die SiC MOSFET, which it measured at over 8 kV blocking, 90 mΩ on-resistance and 55 A drain current. The part is now sampling to US-based customers, and deliveries of production versions are scheduled to begin in Q4 2026.
The 6.5 kV family will grow beyond the demonstrated device to add on-resistance variants, small-die parts, hybrid junction-barrier Schottky FET (JBSFET) devices and standalone diodes. JBSFET construction, the company says, prevents body-diode degradation. NoMIS Power lists high-voltage direct current (HVDC), solid-state transformers, pulsed power, rail traction and MW-scale EV charging among the intended applications.
Higher blocking voltage lets a converter run a higher DC-link voltage without series-connecting lower-voltage devices, an approach that requires voltage-balancing circuitry and adds losses. SiC’s higher critical field allows a thinner drift region than silicon at the same blocking voltage, which holds down on-resistance and conduction losses in the multi-kilovolt classes.
The 3.3 kV MOSFET family is in production: 80 mΩ at 34 A, 50 mΩ at 55 A and 25 mΩ at 105 A, in TO-247-4L-HC and bare die. The portfolio also includes 50–160 mΩ bidirectional SiC switches and a 500 A half-bridge power module. Charged covered the company’s 3.3 kV and 1.7 kV planar devices in February 2026.
Above 6.5 kV, NoMIS Power has 10 kV MOSFETs, diodes, JBSFET parts and SiC IGBTs in development for grid-scale HVDC, traction and pulsed power, and says they will sample in Q4 2026. The roadmap extends toward 20 kV.
“Demonstrating 6.5 kV blocking to over 8 kV proves our planar SiC platform scales cleanly from the 3.3 kV devices shipping today into the high-voltage class,” said Adam Morgan, co-founder and CEO of NoMIS Power.
Source: NoMIS Power
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