Nexperia and Aurobay Technologies will explore a collaboration on gallium nitride (GaN) and silicon carbide (SiC) power semiconductors for electrified and hybrid vehicle platforms. Aurobay Technologies is a division of Horse Powertrain, a joint venture between Renault Group and Geely, and the collaboration aims to combine Nexperia’s GaN and SiC work with Aurobay’s powertrain system design and integration capabilities.
The collaboration follows an earlier project in which Nexperia’s GaN devices were used in Aurobay’s integrated power generation system for range extenders. Nexperia says that project showed the potential for wide-bandgap devices to improve efficiency and reduce system size and weight in demanding automotive environments.
From there, the companies plan to look at power electronics architectures for applications such as traction inverters and power generation systems. They also intend to evaluate joint engineering approaches, including early-stage co-design and system-level optimization.
GaN and SiC devices switch faster than silicon IGBTs and dissipate less energy doing it, so an inverter of a given rating can use smaller passive components and less cooling hardware. Hybrid and range-extender drivetrains are packaging-constrained, because the power electronics share space with an engine and its generator.
“By working closely with Aurobay Technologies, we can better understand system-level requirements and evaluate how advanced semiconductor technologies can deliver measurable benefits at the vehicle level,” said Edoardo Merli, Nexperia’s Head of Business Group Wide-Bandgap, IGBTs and Modules.
“Our experience integrating Nexperia’s GaN technology into a highly integrated power generation system demonstrated the potential of close collaboration across the value chain,” said Ma Yongquan, Aurobay Technologies’ Chief Engineer, Advanced Engineering on Electrical Components.
Source: Nexperia
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